Datasheet

IRG4PH50S
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 167 251 I
C
= 33A
Q
ge
Gate - Emitter Charge (turn-on) 25 38 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) 55 83 V
GE
= 15V
t
d(on)
Turn-On Delay Time 32
t
r
Rise Time 29 T
J
= 25°C
t
d(off)
Turn-Off Delay Time 845 1268 I
C
= 33A, V
CC
= 960V
t
f
Fall Time 425 638 V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss 1.80 Energy losses include "tail"
E
off
Turn-Off Switching Loss 19.6 mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss 21.4 44
t
d(on)
Turn-On Delay Time 32 T
J
= 150°C,
t
r
Rise Time 30 I
C
= 33A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time 1170 V
GE
= 15V, R
G
= 5.0
t
f
Fall Time 1000 Energy losses include "tail"
E
ts
Total Switching Loss 37 mJ See Fig. 10,11,14
L
E
Internal Emitter Inductance 13 nH Measured 5mm from package
C
ies
Input Capacitance 3600 V
GE
= 0V
C
oes
Output Capacitance 160 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 30 —ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 —— VV
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 —— VV
GE
= 0V, I
C
= 1.0 A
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage 1.22 V/°CV
GE
= 0V, I
C
= 2.0 mA
1.47 1.7 I
C
= 33A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage 1.75 I
C
= 57A See Fig.2, 5
1.55 I
C
= 33A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250µA
DV
GE(th)
/DT
J
Temperature Coeff. of Threshold Voltage -11 mV/°CV
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance U 27 40 SV
CE
= 100V, I
C
= 33A
——250 V
GE
= 0V, V
CE
= 1200V
——2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
——1000 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.