Datasheet

7/7/2000
IRG4PH50S
PD -91712A
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current 57
I
C
@ T
C
= 100°C Continuous Collector Current 33 A
I
CM
Pulsed Collector CurrentQ 114
I
LM
Clamped Inductive Load Current R 114
V
GE
Gate-to-Emitter Voltage ±20 V
E
ARV
Reverse Voltage Avalanche EnergyS 270 mJ
P
D
@ T
C
= 25°C Maximum Power Dissipation 200 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 80
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
E
C
G
n-channel
TO-247AC
FeaturesFeatures
FeaturesFeatures
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
=1200V
V
CE(on) typ.
= 1.47V
@V
GE
= 15V, I
C
= 33A
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.64
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θJA
Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6.0 (0.21) ––– g (oz)
Thermal Resistance
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