Datasheet

IRG4PH40UD
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 86 130 I
C
= 21A
Qge Gate - Emitter Charge (turn-on) — 13 20 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 29 44 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 46 — T
J
= 25°C
t
r
Rise Time — 35 — ns I
C
= 21A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time — 97 150 V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time — 240 360 Energy losses include "tail" and
E
on
Turn-On Switching Loss — 1.80 — diode reverse recovery.
E
off
Turn-Off Switching Loss — 1.93 — mJ See Fig. 9, 10, 18
E
ts
Total Switching Loss — 3.73 4.6
t
d(on)
Turn-On Delay Time — 42 — T
J
= 150°C, See Fig. 11, 18
t
r
Rise Time — 32 — ns I
C
= 21A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time — 240 — V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time — 510 — Energy losses include "tail" and
E
ts
Total Switching Loss — 7.04 — mJ diode reverse recovery.
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 1800 — V
GE
= 0V
C
oes
Output Capacitance — 120 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 18 —ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time — 63 95 ns T
J
= 25°C See Fig.
— 106 160 T
J
= 125°C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current — 4.5 8.0 A T
J
= 25°C See Fig.
— 6.2 11 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge — 140 380 nC T
J
= 25°C See Fig.
— 335 880 T
J
= 125°C 16 di/dt = 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs T
J
= 25°C See Fig.
During t
b
— 85 — T
J
= 125°C 17
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown VoltageS 1200 —— VV
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.43 — V/°CV
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.43 3.1 I
C
= 21A V
GE
= 15V
— 2.97 — VI
C
= 41A See Fig. 2, 5
— 2.47 — I
C
= 21A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -11 — mV/°CV
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance T 16 24 — SV
CE
= 100V, I
C
= 21A
I
CES
Zero Gate Voltage Collector Current ——250 µA V
GE
= 0V, V
CE
= 600V
——5000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 2.6 3.3 V I
C
= 8.0A See Fig. 13
— 2.4 3.1 I
C
= 8.0A, T
J
= 125°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)