Datasheet

IRG4PC50WPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on)  180 270 I
C
= 27A
Q
ge
Gate - Emitter Charge (turn-on)  24 36 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on)  63 95 V
GE
= 15V
t
d(on)
Turn-On Delay Time  46 
t
r
Rise Time  33  T
J
= 25°C
t
d(off)
Turn-Off Delay Time  120 180 I
C
= 27A, V
CC
= 480V
t
f
Fall Time  57 86 V
GE
= 15V, R
G
= 5.0Ω
E
on
Turn-On Switching Loss  0.08  Energy losses include "tail"
E
off
Turn-Off Switching Loss  0.32  mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss  0.40 0.5
t
d(on)
Turn-On Delay Time  31  T
J
= 150°C,
t
r
Rise Time  43  I
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time  210  V
GE
= 15V, R
G
= 5.0Ω
t
f
Fall Time  62  Energy losses include "tail"
E
ts
Total Switching Loss  1.14  mJ See Fig. 10,11, 14
L
E
Internal Emitter Inductance  13  nH Measured 5mm from package
C
ies
Input Capacitance  3700  V
GE
= 0V
C
oes
Output Capacitance  260  pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance  68   = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600   V V
GE
= 0V, I
C
= 250µA
V
(BR)CES
Emitter-to-Collector Breakdown Voltage  18 VV
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage  0.41  V/°C V
GE
= 0V, I
C
= 5.0mA
 1.93 2.3 I
C
= 27A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage  2.25  I
C
= 55A See Fig.2, 5
 1.71  I
C
= 27A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0  6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage  -11  mV/°C V
CE
= V
GE
, I
C
= 1.0mA
g
fe
Forward Transconductance  27 41  S V
CE
= 100 V, I
C
= 27A
  250 V
GE
= 0V, V
CE
= 600V
  2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
  5000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current   ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
 Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.
Notes:
 Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
 V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
 Repetitive rating; pulse width limited by maximum
junction temperature.