Datasheet

IRG4PC50U
www.irf.com 5
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
2000
4000
6000
8000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Emitter Volta
g
e
(
V
)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
GE
ies ge g c ce
res gc
oes ce gc
0
4
8
12
16
20
0 40 80 120 160 200
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Char
g
e
(
nC
)
A
V = 400V
I = 27A
CE
C
0.1
1
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
Total Switching Losses (mJ)
A
T , Junction Temperature
(
°C
)
J
I = 54A
I = 27A
I = 14A
R = 5.0
Ω
V = 15V
V = 480V
C
C
C
G
GE
CC
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 102030405060
G
Total Switching Losses (mJ)
R , Gate Resistance
(
Ω
)
A
V = 480V
V = 15V
T = 25°C
I = 27A
CC
GE
J
C