Datasheet

IRG4PC50U
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) ---- 180 270 I
C
= 27A
Q
ge
Gate - Emitter Charge (turn-on) ---- 25 38 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) ---- 61 90 V
GE
= 15V
t
d(on)
Turn-On Delay Time ---- 32 ----
t
r
Rise Time ---- 20 ---- T
J
= 25°C
t
d(off)
Turn-Off Delay Time ---- 170 260 I
C
= 27A, V
CC
= 480V
t
f
Fall Time ---- 88 130 V
GE
= 15V, R
G
= 5.0Ω
E
on
Turn-On Switching Loss ---- 0.12 ---- Energy losses include "tail"
E
off
Turn-Off Switching Loss ---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
E
ts
Total Switching Loss ---- 0.66 0.9
t
d(on)
Turn-On Delay Time ---- 31 ---- T
J
= 150°C,
t
r
Rise Time ---- 23 ---- I
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ---- 230 ---- V
GE
= 15V, R
G
= 5.0Ω
t
f
Fall Time ---- 120 ---- Energy losses include "tail"
E
ts
Total Switching Loss ---- 1.6 ---- mJ See Fig. 13, 14
L
E
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
C
ies
Input Capacitance ---- 4000 ---- V
GE
= 0V
C
oes
Output Capacitance ---- 250 ---- pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°CV
GE
= 0V, I
C
= 1.0mA
---- 1.65 2.0 I
C
= 27A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage ---- 2.0 ---- I
C
= 55A See Fig.2, 5
---- 1.6 ---- I
C
= 27A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 ---- 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°CV
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance U 16 24 ---- S V
CE
≥ 15V, I
C
= 27A
---- ---- 250 V
GE
= 0V, V
CE
= 600V
---- ---- 2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
---- ---- 5000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ---- ---- ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.