Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsIGBT N channel 27A

IRG4PC50U

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD 91470F

n-channel

TO-247AC

FeaturesFeatures

Features

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• Industry standard TO-247AC package

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Benefits

CES

= 600V

CE(on) typ.

= 1.65V

= 15V, I

= 27A

Parameter Typ. Max. Units

θJC

Junction-to-Case ---- 0.64

θCS

Case-to-Sink, Flat, Greased Surface 0.24 ---- °C/W

θJA

Junction-to-Ambient, typical socket mount ---- 40

Wt Weight 6 (0.21) ---- g (oz)

Thermal Resistance

Parameter Max. Units

CES

Collector-to-Emitter Breakdown Voltage 600 V

@ T

= 25°C Continuous Collector Current 55

@ T

= 100°C Continuous Collector Current 27 A

Pulsed Collector Current Q 220

Clamped Inductive Load Current R 220

Gate-to-Emitter Voltage ± 20 V

ARV

Reverse Voltage Avalanche Energy S 20 mJ

@ T

= 25°C Maximum Power Dissipation 200

@ T

= 100°C Maximum Power Dissipation 78

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

12/30/00

www.irf.com 1

Summary of content (8 pages)

PAGE 1
PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package VCES = 600V VCE(on) typ. = 1.
PAGE 2
IRG4PC50U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ---Emitter-to-Collector Breakdown Voltage T 18 ---∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- 1.65 VCE(ON) Collector-to-Emitter Saturation Voltage ---- 2.0 ---- 1.6 VGE(th) Gate Threshold Voltage 3.0 ---∆VGE(th)/∆TJ Temperature Coeff.
PAGE 3
IRG4PC50U 80 F o r b o th : 60 L oad C urre nt (A ) T rian gu la r w a ve: D u t y c yc le: 5 0% T J = 1 2 5 °C T s in k = 9 0 °C G a te d r ive a s sp ec ified P o w e r D is sip atio n = 40 W C la m p vo lta g e : 8 0 % o f ra te d S q u are w a ve : 40 6 0 % o f ra ted vo ltag e 20 Idea l d io des A 0 0.1 1 10 100 f, F re qu e nc y (k H z) Fig. 1 - Typical Load Current vs.
PAGE 4
IRG4PC50U 2.5 V G E = 15 V V CE , C olle ctor-to-E m itte r V oltage (V) M aximum D C Collector Current (A ) 60 50 40 30 20 10 0 25 50 75 100 125 V G E = 1 5V 8 0 µs P U L S E W ID TH IC = 5 4 A 2.0 IC = 2 7 A 1.5 IC = 14 A A 1.0 150 -60 T C , C ase Tem perature (°C) -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n Te m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs.
PAGE 5
IRG4PC50U V GE C ie s C re s C o es 6000 = = = = 20 0V , f = 1M Hz C ge + C gc , C ce SH OR T ED C gc C ce + C gc V G E , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 8000 C ie s 4000 C oe s 2000 C res 16 12 8 4 A 0 1 10 VC E = 400V I C = 27A A 0 0 100 40 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) 2.0 160 200 Fig. 8 - Typical Gate Charge vs.
PAGE 6
IRG4PC50U RG TJ V CC V GE 1000 = 5 .0Ω = 1 5 0 °C = 480V = 15V I C , C ollector-to-E m itter Current (A ) Total Switc hing Losses (mJ ) 3.0 2.0 1.0 A 0.0 0 10 20 30 40 50 I C , C o lle cto r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGGE E= 2 0V T J = 125 °C S A FE O P E R A T IN G A R E A 100 10 1 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA www.irf.
PAGE 7
IRG4PC50U L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T.
PAGE 8
IRG4PC50U Case Outline and Dimensions TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -A5 .5 0 (.2 1 7) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 -D- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) LEAD 1234- 3 -C- * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 3X 1 .4 0 (.0 5 6 ) 1 .