Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsIGBT N channel 27A

IRG4PC50UD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

n-channel

CES

= 600V

CE(on) typ.

= 1.65V

= 15V, I

= 27A

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ------ ------ 0.64

θJC

Junction-to-Case - Diode ------ ------ 0.83 °C/W

θCS

Case-to-Sink, flat, greased surface ------ 0.24 ------

θJA

Junction-to-Ambient, typical socket mount ----- ----- 40

Wt Weight ------ 6 (0.21) ------ g (oz)

Thermal Resistance

UltraFast CoPack IGBT

12/30/00

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 55

@ T

= 100°C Continuous Collector Current 27

Pulsed Collector Current Q 220 A

Clamped Inductive Load Current R 220

@ T

= 100°C Diode Continuous Forward Current 25

Diode Maximum Forward Current 220

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation 200

@ T

= 100°C Maximum Power Dissipation 78

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-247AC package

Benefits

• Generation 4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

PD 91471B

TO-247AC

www.irf.com 1

Summary of content (10 pages)

PAGE 1
PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package VCES = 600V VC
PAGE 2
IRG4PC50UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown VoltageS 600 ------V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V ---- 2.0 ---V IC = 55A See Fig. 2, 5 ---- 1.6 ---IC = 27A, TJ = 150°C Gate Threshold Voltage 3.0 ---- 6.
PAGE 3
IRG4PC50UD 40 D u ty c ycl e: 5 0% T J = 1 25 °C T sin k = 90 °C Ga te d rive a s spe cifi ed Tu rn -on lo sses inclu de effe cts o f reve rse re cov ery P o w e r D issipa tion = 4 0 W Loa d C urre nt (A) 30 6 0 % o f rate d v o lta g e 20 10 A 0 0.1 1 10 100 f, Freq uen cy (kH z) Fig. 1 - Typical Load Current vs.
PAGE 4
IRG4PC50UD 2.5 V G E = 15 V V CE , C olle ctor-to-E m itte r V oltage (V) M aximum D C Collector Current (A ) 60 50 40 30 20 10 0 25 50 75 100 125 IC = 5 4 A 2.0 IC = 2 7 A 1.5 IC = 14 A A 1.0 150 -60 T C , C ase Tem perature (°C) Fig. 4 - Maximum Collector Current vs. Temperature V G E = 1 5V 8 0 µs P U L S E W ID TH -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n Te m p e ra tu re (°C ) Case Fig. 5 - Typical Collector-to-Emitter Voltage vs.
PAGE 5
IRG4PC50UD 20 V GE C ie s C re s C oes 6000 = = = = 0V , f = 1M Hz C ge + C gc , C ce SH O R TED C gc C ce + C gc V G E , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 8000 C ie s 4000 C oes 2000 C res A 0 1 10 VC E = 400V I C = 27A 16 12 8 4 A 0 0 100 40 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 2.5 2.0 1.5 A 1.0 10 20 30 40 R G , G a te R e s is ta n c e ( 50 Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.
PAGE 6
IRG4PC50UD 1000 = 5 .0 Ω = 1 5 0 °C = 480V = 15V I C , Collector-to-E m itter C urrent (A) RG TJ V CC V GE 6.0 4.0 2.0 A 0.0 0 10 20 30 40 50 VGGE E= 2 0V T J = 125 °C S A FE O P E R A TIN G A R E A 100 10 1 60 1 I C , C o lle c to r-to-E m itte r C u rre n t (A ) 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs.
PAGE 7
IRG4PC50UD 100 140 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V TJ = 125°C TJ = 25°C 120 I IR R M - (A ) t rr - (ns) 100 I F = 50A 80 I F = 25A I F = 5 0A I F = 2 5A 10 I F = 10 A IF = 10A 60 40 20 100 1 100 1000 di f /dt - (A/µs) 1000 d i f /d t - (A /µ s) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs.
PAGE 8
IRG4PC50UD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 9 0 % Ic 10% Vce Ic 5 % Ic 430µF 80% of Vce D .U .T. td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T .
PAGE 9
IRG4PC50UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20.
PAGE 10
IRG4PC50UD Notes: Q Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 ) 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -D- M D B M -A5 .5 0 (.2 17 ) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.