Datasheet
IRG4PC40KPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 120 180 I
C
= 25A
Q
ge
Gate - Emitter Charge (turn-on) 16 24 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) 51 77 V
GE
= 15V
t
d(on)
Turn-On Delay Time 30
t
r
Rise Time 15 T
J
= 25°C
t
d(off)
Turn-Off Delay Time 140 210 I
C
= 25A, V
CC
= 480V
t
f
Fall Time 140 210 V
GE
= 15V, R
G
= 10Ω
E
on
Turn-On Switching Loss 0.62 Energy losses include "tail"
E
off
Turn-Off Switching Loss 0.33 mJ See Fig. 9,10,14
E
ts
Total Switching Loss 0.95 1.4
t
sc
Short Circuit Withstand Time 10 µs V
CC
= 400V, T
J
= 125°C
V
GE
= 15V, R
G
= 10Ω , V
CPK
< 500V
t
d(on)
Turn-On Delay Time 30 T
J
= 150°C,
t
r
Rise Time 18 I
C
= 25A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time 190 V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time 150 Energy losses include "tail"
E
ts
Total Switching Loss 1.9 mJ See Fig. 11,14
L
E
Internal Emitter Inductance 13 nH Measured 5mm from package
C
ies
Input Capacitance 1600 V
GE
= 0V
C
oes
Output Capacitance 130 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 55 = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage 0.46 V/°C V
GE
= 0V, I
C
= 1.0mA
2.10 2.6 I
C
= 25A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage 2.70 I
C
= 42A See Fig.2, 5
2.14 I
C
= 25A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage -13 mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 7.0 14 S V
CE
= 100 V, I
C
= 25A
250 V
GE
= 0V, V
CE
= 600V
2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
2000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10Ω,
(See fig. 13a)