Datasheet

7/26/04
V
CES
= 600V
V
CE(on) typ.
= 2.1V
@V
GE
= 15V, I
C
= 25A
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 42
I
C
@ T
C
= 100°C Continuous Collector Current 25 A
I
CM
Pulsed Collector Current  84
I
LM
Clamped Inductive Load Current  84
t
sc
Short Circuit Withstand Time 10 µs
V
GE
Gate-to-Emitter Voltage ±20 V
E
ARV
Reverse Voltage Avalanche Energy  15 mJ
P
D
@ T
C
= 25°C Maximum Power Dissipation 160 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 65
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
IRG4PC40KPbF
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95646
Parameter Typ. Max. Units
R
θJC
Junction-to-Case  0.77
R
θCS
Case-to-Sink, Flat, Greased Surface 0.24  °C/W
R
θJA
Junction-to-Ambient, typical socket mount  40
Wt Weight 6 (0.21)  g (oz)
Thermal Resistance
TO-247AC
Features
 Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, V
GE
= 15V
 Generation 4 IGBT design provides higher efficiency
than Generation 3
 Industry standard TO-247AC package
 Lead-Free
 Generation 4 IGBTs offer highest efficiency available
 IGBTs optimized for specified application conditions
Benefits
E
C
G
n-channel