Datasheet

IRG4PC40F
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Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
4
8
12
16
20
0 20 40 60 80 100 120
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Char
g
e (nC)
A
V = 400V
I = 27A
CE
C
0.1
1
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
Total Switching Losses (mJ)
A
T , Junction Temperature (°C)
J
R = 10
Ω
V = 15V
V = 480V
I = 14A
I = 27A
I = 54A
G
GE
CC
C
C
C
2.10
2.20
2.30
2.40
2.50
2.60
0 102030405060
A
V = 480V
V = 15V
T = 25°C
I = 27A
R , Gate Resistance
(Ω)
CC
GE
J
C
G
Total Switchig Losses (mJ)
0
1000
2000
3000
4000
1 10 100
CE
V , Collector-to-Emitter Volta
g
e
(
V
)
A
C
ies
C
res
C
oes
V
GE
= 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
C , Capacitance ( pF)