Datasheet

IRG4PC40F
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 100 150 I
C
= 27A
Q
ge
Gate - Emitter Charge (turn-on) — 15 23 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 35 53 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 26 —
t
r
Rise Time — 18 — T
J
= 25°C
t
d(off)
Turn-Off Delay Time — 240 360 I
C
= 27A, V
CC
= 480V
t
f
Fall Time — 170 250 V
GE
= 15V, R
G
= 10Ω
E
on
Turn-On Switching Loss — 0.37 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 1.81 — mJ See Fig. 10, 11, 13, 14
E
ts
Total Switching Loss — 2.18 2.8
t
d(on)
Turn-On Delay Time — 25 — T
J
= 150°C,
t
r
Rise Time — 21 — I
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 380 — V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time — 310 — Energy losses include "tail"
E
ts
Total Switching Loss — 3.9 — mJ See Fig. 13, 14
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 2200 — V
GE
= 0V
C
oes
Output Capacitance — 140 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 29 —ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 —— VV
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 —— VV
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.70 — V/°CV
GE
= 0V, I
C
= 1.0mA
— 1.50 1.7 I
C
= 27A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage — 1.85 — I
C
= 49A See Fig.2, 5
— 1.56 — I
C
= 27A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -12 — mV/°CV
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance U 9.2 12 — SV
CE
= 100V, I
C
= 27A
——250 V
GE
= 0V, V
CE
= 600V
——2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
——1000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.