Datasheet

IRG4PC40FDPbF
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Total Switchig Losses (mJ)
Total Switchig Losses (mJ)
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
R = 10
Ω
V = 15V
V = 480V
A
G
GE
CC
T , Junction Temperature (°C)
J
I = 14A
I = 54A
I = 27A
C
C
C
0
4
8
12
16
20
0 20406080100120
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Charge (nC)
A
V = 400V
 I = 27A
CE
C
0
1000
2000
3000
4000
1 10 100
CE
V , Collector-to-Emitter Voltage (V)
A
C
ies
C
res
C
oes
V
GE
= 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
C , Capacitance ( pF)
3.0
3.1
3.2
3.3
0 102030405060
A
R , Gate Resistance (
Ω
)
G
V = 480V
V = 15V
T = 25°C
I = 27A
CC
GE
J
C