Datasheet

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IRG4PC40FDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

n-channel

CES

= 600V

CE(on) typ.

= 1.50V

= 15V, I

= 27A

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ------ ------ 0.77

θJC

Junction-to-Case - Diode ------ ------ 1.7 °C/W

θCS

Case-to-Sink, flat, greased surface ------ 0.24 ------

θJA

Junction-to-Ambient, typical socket mount ----- ----- 40

Wt Weight ------ 6 (0.21) ------ g (oz)

Thermal Resistance

Fast CoPack IGBT

06/17/2010

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 49

@ T

= 100°C Continuous Collector Current 27

Pulsed Collector Current  196 A

Clamped Inductive Load Current  196

@ T

= 100°C Diode Continuous Forward Current 15

Diode Maximum Forward Current 200

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation 160

@ T

= 100°C Maximum Power Dissipation 65

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)

 Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

 Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

 IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

 Industry standard TO-247AC package

Benefits

 Generation -4 IGBT's offer highest efficiencies

available

 IGBT's optimized for specific application conditions

 HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

 Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

TO-247AC

www.irf.com 1

 Lead-Free

PD - 94911A

Summary of content (10 pages)

PAGE 1
PD - 94911A IRG4PC40FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
PAGE 2
IRG4PC40FDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 9.
PAGE 3
IRG4PC40FDPbF 40 Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery Load Current (A) 30 Power Dissipation = 35W 60% of rated voltage 20 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) (A) IC , Collector-to-Emitter Current TJ = 25°C 100 TJ = 150°C 10 VGE = 15V 20µs PULSE WIDTH A 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig.
PAGE 4
IRG4PC40FDPbF 2.5 V GE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 50 40 30 20 10 0 25 50 75 100 125 I C = 54A 2.0 I C = 27A 1.5 I C = 14A A 1.0 150 -60 TC , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature VGE = 15V 80µs PULSE WIDTH -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.
PAGE 5
IRG4PC40FDPbF 4000 VGE = 0V Coes = Cce + Cgc 3000 Cies 2000 Coes 1000 Cres A 0 1 VCE = 400V IC = 27A SHORTED VGE , Gate-to-Emitter Voltage (V) Cies = Cge + Cgc + Cce Cres = Cce C , Capacitance ( pF) 20 f = 1 MHz 10 16 12 8 4 A 0 0 100 20 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 100 = 480V = 15V = 25°C = 27A 3.2 3.1 A 3.0 0 10 20 30 40 50 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 100 120 Fig.
PAGE 6
IRG4PC40FDPbF RG TJ VCC VGE 10 1000 = 10 Ω = 150°C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switchig Losses (mJ) 12 8 6 4 2 A 0 0 10 20 30 40 50 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1 1 60 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs.
PAGE 7
IRG4PC40FDPbF 100 100 VR = 200V TJ = 125°C TJ = 25°C VR= 200V T J = 125°C T J = 25°C 80 I IRRM - (A) t rr - (ns) I F = 30A I F = 30A 60 I F = 15A IF = 15A 10 I F = 5.0A 40 I F = 5.0A 20 100 di f /dt - (A/µs) 1 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 800 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) 600 Q RR - (nC) IF = 30A 400 I F = 15A IF = 5.
PAGE 8
IRG4PC40FDPbF 90% Vge +Vge Same type device as D.U.T. Vce Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce D.U.T. td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T.
PAGE 9
IRG4PC40FDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V RL = VCC ICM Vc* 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com 0 - VCC 480µF Figure 20.
PAGE 10
IRG4PC40FDPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 NOTES: 5.50 (.217) 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 3 -C- 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 4.30 (.