Datasheet

IRG4IBC30UDPbF
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Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
400
800
1200
1600
2000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Emitter Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0 1020304050
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Charge (nC)
A
V = 400V
 I = 12A
CE
C
Total Switchig Losses (mJ)
0.1
1
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
A
T , Junction Temperature (°C)
J
R = 23 Ω
V = 15V
V = 480V
I = 24A
I = 12A
I = 6.0A
G
GE
CC
C
C
C
Total Switchig Losses (mJ)
0.50
0.52
0.54
0.56
0.58
0.60
0 102030405060
G
A
R , Gate Resistance (
Ω
)
V = 480V
V = 15V
T = 25°C
I = 12A
CC
GE
J
C