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IRG4IBC30UDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

n-channel

CES

= 600V

CE(on) typ.

= 1.95V

= 15V, I

= 12A

UltraFast CoPack IGBT

06/17/2010

Parameter Typ. Max. Units

θJC

Junction-to-Case - IGBT ––– 2.8

θJC

Junction-to-Case - Diode ––– 4.1 °C/W

θJA

Junction-to-Ambient, typical socket mount ––– 65

Wt Weight 2.0 (0.07) ––– g (oz)

Thermal Resistance

TO-220 FULLPAK

www.irf.com 1

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 17

@ T

= 100°C Continuous Collector Current 8.9

Pulsed Collector Current  68 A

Clamped Inductive Load Current  68

@ T

= 100°C Diode Continuous Forward Current 8.5

Diode Maximum Forward Current 92

Visol RMS Isolation Voltage, Terminal to Case 2500 V

Gate-to-Emitter Voltage ± 20

@ T

= 25°C Maximum Power Dissipation 45

@ T

= 100°C Maximum Power Dissipation 18

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Absolute Maximum Ratings

• 2.5kV, 60s insulation voltage 

• 4.8 mm creapage distance to heatsink

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• IGBT co-packaged with HEXFRED

ultrafast,

ultrasoft recovery antiparallel diodes

• Tighter parameter distribution

• Industry standard Isolated TO-220 Fullpak

outline

• Lead-Free

Benefits

• Simplified assembly

• Highest efficiency and power density

• HEXFRED

antiparallel Diode minimizes

switching losses and EMI

PD- 95598A

Summary of content (10 pages)

PAGE 1
PD- 95598A IRG4IBC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage • 4.
PAGE 2
IRG4IBC30UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltageƒ ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Min. 600 ––– ––– ––– ––– Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ––– Forward Transconductance 3.
PAGE 3
IRG4IBC30UDPbF 12 For both: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified LOAD CURRENT (A) 10 Power Dissipation = 13 W 8 Square wave: 60% of rated voltage 6 I 4 Ideal diodes 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25°C TJ = 150°C 10 1 VGE = 15V 20µs PULSE WIDTH A 0.1 0.1 1 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.
PAGE 4
IRG4IBC30UDPbF 3.0 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current(A) 20 16 12 8 4 0 25 50 75 100 125 V GE = 15V 80µs PULSE WIDTH IC = 24A 2.5 IC = 12A 2.0 I C = 6.0A A 1.5 150 -60 TC , Case Temperature ( °C) -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.
PAGE 5
IRG4IBC30UDPbF 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 1600 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 2000 Cies 1200 800 Coes 400 Cres A 0 1 10 VCE = 400V I C = 12A 16 12 8 4 A 0 100 0 10 VCE, Collector-to-Emitter Voltage (V) 10 Total Switchig Losses (mJ) Total Switchig Losses (mJ) 0.56 0.54 0.52 A 0.50 0 10 20 30 40 50 R G, Gate Resistance ( Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.
PAGE 6
IRG4IBC30UDPbF 1000 R G = 23 Ω T J = 150°C V CC = 480V V GE = 15V 1.6 I C , Collector Current (A) Total Switchig Losses (mJ) 2.0 VGE = 20V T J = 125 oC 100 1.2 0.8 10 1 0.4 0.1 A 0.0 0 10 20 30 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) IC , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Instantaneous Forward Current - I F (A) 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.
PAGE 7
IRG4IBC30UDPbF 100 160 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) I F = 24A I F = 12A 80 I F = 6.0A I F = 24A I F = 12A 10 IF = 6.0A 40 0 100 di f /dt - (A/µs) 1 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs.
PAGE 8
IRG4IBC30UDPbF Same type device as D.U.T. 90% 10% Vge 430µF 80% of Vce VC D.U.T. 90% td(off) 10% IC 5% tf tr t d(on) t=5µs Eon Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff Ets= (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T.
PAGE 9
IRG4IBC30UDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit RL = VCC ICM D.U.T. L 1000V Vc* 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com 0 - VCC 480µF Figure 20.
PAGE 10
IRG4IBC30UDPbF TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information (;$03/( 7+,6 ,6 $1 ,5), * :,7+ $66(0%/< /27 &2'( $66(0%/(' 21 :: ,1 7+( $66(0%/< /,1( . Note: "P" in assembly line position indicates "Lead-Free" ,17(51$7,21$/ 5(&7,),(5 /2 *2 3$57 180%(5 ,5 ) , * . $66(0%/< /27 &2'( '$7( &2'( <($5 :((. /,1( .