Datasheet

IRG4IBC30FD
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Total Switchig Losses (mJ)
0.1
1
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
A
T , Junction Temperature (°C)
J
I = 8.5A
I = 17A
I = 34A
R = 23
Ω
V = 15V
V = 480V
G
GE
CC
C
C
C
Total Switchig Losses (mJ)
1.80
1.90
2.00
2.10
2.20
0 20406080
A
R , Gate Resistance (
Ω
)
G
V = 480V
V = 15V
T = 25°C
I = 17A
CC
GE
J
C
0
400
800
1200
1600
2000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Emitter Volta
g
e (V)
A
C
ies
C
res
C
oes
V
GE
= 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
0
4
8
12
16
20
0 102030405060
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Char
g
e (nC)
A
V = 400V
I = 17A
CE
C