Datasheet

IRG4IBC30FD
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) ––– 51 77 I
C
= 17A
Qge Gate - Emitter Charge (turn-on) ––– 7.9 12 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) ––– 19 28 V
GE
= 15V
t
d(on)
Turn-On Delay Time ––– 42 ––– T
J
= 25°C
t
r
Rise Time ––– 26 ––– ns I
C
= 17A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ––– 230 350 V
GE
= 15V, R
G
= 23Ω
t
f
Fall Time ––– 160 230 Energy losses include "tail" and
E
on
Turn-On Switching Loss ––– 0.63 ––– diode reverse recovery.
E
off
Turn-Off Switching Loss ––– 1.39 ––– mJ See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss ––– 2.02 3.9
t
d(on)
Turn-On Delay Time ––– 42 ––– T
J
= 150°C, See Fig. 9, 10, 11, 18
t
r
Rise Time ––– 27 ––– ns I
C
= 17A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ––– 310 ––– V
GE
= 15V, R
G
= 23Ω
t
f
Fall Time ––– 310 ––– Energy losses include "tail" and
E
ts
Total Switching Loss ––– 3.2 ––– mJ diode reverse recovery.
L
E
Internal Emitter Inductance ––– 7.5 ––– nH Measured 5mm from package
C
ies
Input Capacitance ––– 1100 ––– V
GE
= 0V
C
oes
Output Capacitance ––– 74 ––– pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance ––– 14 ––– ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time ––– 42 60 ns T
J
= 25°C See Fig.
––– 80 120 T
J
= 125°C 14 I
F
= 12A
I
rr
Diode Peak Reverse Recovery Current ––– 3.5 6.0 A T
J
= 25°C See Fig.
––– 5.6 10 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge ––– 80 180 nC T
J
= 25°C See Fig.
––– 220 600 T
J
= 125°C 16 di/dt 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery ––– 180 ––– A/µs T
J
= 25°C See Fig.
During t
b
––– 120 ––– T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– ––– V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage ––– 1.59 1.8 I
C
= 17A V
GE
= 15V
––– 1.99 ––– V I
C
= 31A See Fig. 2, 5
––– 1.70 ––– I
C
= 17A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 ––– 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance  6.1 10 ––– S V
CE
= 100V, I
C
= 17A
I
CES
Zero Gate Voltage Collector Current ––– ––– 250 µA V
GE
= 0V, V
CE
= 600V
––– ––– 2500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop ––– 1.4 1.7 V I
C
= 12A See Fig. 13
––– 1.3 1.6 I
C
= 12A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ––– ––– ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)