Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsIGBT N channel 11A

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 20.3

@ T

= 100°C Continuous Collector Current 11

Pulsed Collector Current  120 A

Clamped Inductive Load Current  120

@ T

= 100°C Diode Continuous Forward Current 8.5

Diode Maximum Forward Current 120

Visol RMS Isolation Voltage, Terminal to Case 2500 V

Gate-to-Emitter Voltage ± 20

@ T

= 25°C Maximum Power Dissipation 45

@ T

= 100°C Maximum Power Dissipation 18

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

IRG4IBC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

n-channel

CES

= 600V

CE(on) typ.

= 1.59V

= 15V, I

= 17A

Fast CoPack IGBT

3/26/99

Absolute Maximum Ratings

PD- 91751A

Parameter Typ. Max. Units

θJC

Junction-to-Case - IGBT ––– 2.8

θJC

Junction-to-Case - Diode ––– 4.1 °C/W

θJA

Junction-to-Ambient, typical socket mount ––– 65

Wt Weight 2.0 (0.07) ––– g (oz)

Thermal Resistance

www.irf.com 1

TO-220 FULLPAK

FeaturesFeatures

Features

• Very Low 1.59V votage drop

• 2.5kV, 60s insulation voltage



• 4.8 mm creapage distance to heatsink

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• IGBT co-packaged with HEXFRED

ultrafast,

ultrasoft recovery antiparallel diodes

• Tighter parameter distribution

• Industry standard Isolated TO-220 Fullpak

outline

Benefits

• Simplified assembly

• Highest efficiency and power density

• HEXFRED

antiparallel Diode minimizes

switching losses and EMI

Summary of content (10 pages)

PAGE 1
PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Very Low 1.59V votage drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
PAGE 2
IRG4IBC30FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Min. 600 ––– ––– ––– ––– Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ––– Forward Transconductance 6.
PAGE 3
IRG4IBC30FD 16 LOAD CURRENT (A) F o r b o th : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 13 W 12 S q u a re w a v e : 6 0% of rate d volta ge 8 I 4 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs.
PAGE 4
IRG4IBC30FD 25 V C E , Collector-to-Emitter Voltage (V) Maximum DC Collector Current(A) 2.5 20 15 10 5 V G E = 15V 80µs PULSE WIDTH I C = 34A 2.0 I C = 17A 1.5 I C = 8.5A 0 25 50 75 100 125 150 Fig. 4 - Maximum Collector Current vs. Case Temperature A 1.0 -60 TC , Case Temperature ( °C) -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.
PAGE 5
IRG4IBC30FD 2000 20 C, Capacitance (pF) SHORTED Coes = Cce + Cgc 1600 C ies 1200 800 C oes 400 C res A 0 1 VC E = 400V I C = 17A f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce V G E , Gate-to-Emitter Voltage (V) VGE = 0V 10 16 12 8 4 A 0 100 0 10 V C E , Collector-to-Emitter Voltage (V) 2.10 2.00 1.90 A 1.80 20 40 R G, Gate Resistance ( 60 Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 50 60 10 = 480V = 15V = 25°C = 17A 0 40 Fig.
PAGE 6
IRG4IBC30FD = = = = 1000 23 Ω 150°C 480V 15V I C , C ollecto r-to -Em itter Cu rrent (A) RG TJ V CC V GE 6.0 4.0 2.0 A 0.0 0 10 20 30 VGGE E= 2 0V T J = 12 5 °C 100 S A FE O P E R A TIN G A R E A 10 1 40 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs.
PAGE 7
IRG4IBC30FD 100 160 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 120 I IR R M - (A ) t rr - (ns) I F = 24 A I F = 1 2A 80 I F = 6 .0 A I F = 24 A I F = 12 A 10 I F = 6.0 A 40 0 100 d i f /d t - (A /µ s) 1 100 1000 1000 d i f /d t - (A /µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs.
PAGE 8
IRG4IBC30FD Same ty pe device as D .U.T. 90% 10% Vge 430µF 80% of Vce VC D .U .T. 90% t d(off) 10% IC 5% tf tr t d(on) t=5µs Eon Fig. 18a - Test Circuit for Measurement of Eoff E ts = (Eon +Eoff ) ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T .
PAGE 9
IRG4IBC30FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20.
PAGE 10
IRG4IBC30FD Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. t = 60s, f = 60Hz Case Outline TO-220 FULLPAK 1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) ø 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) -A 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 2 .8 0 (.1 10 ) 2 .6 0 (.