Datasheet

IRG4BC40W
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
1 10 100
0
1000
2000
3000
4000
V , Collector-to-Emitter Volta
g
e (V)
C, Capacitance (pF)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
g
c , ce
res
g
c
oes ce
g
c

C
ies

C
oes

C
res
0 20 40 60 80 100
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Emitter Voltage (V)
G
GE

V = 400V
I = 20A
CC
C
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°

R = 10Ohm
V = 15V
V = 480V
G
GE
CC

I = A
40
C

I = A
20
C

I = A
10
C
10 Ω
10 20 30 40 50 60
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G

V = 480V
V = 15V
T = 25 C
I = 20A
CC
GE
J
C
°
(Ω)