Datasheet

IRG4BC40UPbF
www.irf.com 5
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
1000
2000
3000
4000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0 20 40 60 80 100 120
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Charge (nC)
A
V = 400V
I = 20A
CE
C
0.1
1
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
Total Switching Losses (mJ)
R = 10
V = 15V
V = 480V
A
I = 40A
I = 20A
I = 10A
G
GE
CC
C
C
C
T , Junction Temperature (°C)
J
0.6
0.7
0.8
0.9
1.0
1.1
0 102030405060
G
Total Switching Losses (mJ)
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25°C
I = 20A
CC
GE
J
C
Fig. 10 - Typical Switching Losses vs.
Junction Temperature