Datasheet

IRG4BC40UPbF
2 www.irf.com
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10,
(see fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs, single shot.
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) ---- 100 150 I
C
= 20A
Q
ge
Gate - Emitter Charge (turn-on) ---- 16 25 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) ---- 40 60 V
GE
= 15V
t
d(on)
Turn-On Delay Time ---- 34 ---- T
J
= 25°C
t
r
Rise Time ---- 19 ---- ns I
C
= 20A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ---- 110 175 V
GE
= 15V, R
G
= 10
t
f
Fall Time ---- 120 180 Energy losses include "tail"
E
on
Turn-On Switching Loss ---- 0.32 ----
E
off
Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14
E
ts
Total Switching Loss ---- 0.67 1.0
t
d(on)
Turn-On Delay Time ---- 30 ---- T
J
= 150°C,
t
r
Rise Time ---- 19 ---- ns I
C
= 20A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ---- 220 ---- V
GE
= 15V, R
G
= 10
t
f
Fall Time ---- 160 ---- Energy losses include "tail"
E
ts
Total Switching Loss ---- 1.4 ---- mJ See Fig. 13, 14
L
E
Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
C
ies
Input Capacitance ---- 2100 ---- V
GE
= 0V
C
oes
Output Capacitance ---- 140 ---- pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance ---- 34 ---- = 1.0MHz
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 ---- ---- V V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 I
C
= 20A V
GE
= 15V
---- 2.15 ---- V I
C
= 40A
---- 1.7 ---- I
C
= 20A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 ---- 6.0 V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
/T
J
Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 11 18 ---- S V
CE
= 100V, I
C
= 20A
---- ---- 250 V
GE
= 0V, V
CE
= 600V
I
CES
Zero Gate Voltage Collector Current ---- ---- 2.0 µA V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
---- ---- 2500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ---- ---- ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
See Fig. 2, 5