Datasheet
IRG4BC40UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
UltraFast: optimized for high operating
frequencies 8-40 KHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-220AB package
Lead-Free
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case ------ ------ 0.77
R
θCS
Case-to-Sink, flat, greased surface ------ 0.50 ------ °C/W
R
θJA
Junction-to-Ambient, typical socket mount ------ ------ 80
Wt Weight ------ 2 (0.07) ------ g (oz)
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 40
I
C
@ T
C
= 100°C Continuous Collector Current 20 A
I
CM
Pulsed Collector Current 160
I
LM
Clamped Inductive Load Current 160
V
GE
Gate-to-Emitter Voltage ±20 V
E
ARV
Reverse Voltage Avalanche Energy 15 mJ
P
D
@ T
C
= 25°C Maximum Power Dissipation 160
P
D
@ T
C
= 100°C Maximum Power Dissipation 65
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Thermal Resistance
V
CES
= 600V
V
CE(on) typ.
= 1.72V
@V
GE
= 15V, I
C
= 20A
02/18/10
W
www.irf.com 1
TO-220AB
PD - 95428A