Datasheet

IRG4BC30KDPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on)  67 100 I
C
= 16A
Q
ge
Gate - Emitter Charge (turn-on)  11 16 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on)  25 37 V
GE
= 15V
t
d(on)
Turn-On Delay Time  60 
t
r
Rise Time  42  T
J
= 25°C
t
d(off)
Turn-Off Delay Time  160 250 I
C
= 16A, V
CC
= 480V
t
f
Fall Time  80 120 V
GE
= 15V, R
G
= 23Ω
E
on
Turn-On Switching Loss  0.60  Energy losses include "tail"
E
off
Turn-Off Switching Loss  0.58  mJ and diode reverse recovery
E
ts
Total Switching Loss  1.18 1.6 See Fig. 9,10,14
t
sc
Short Circuit Withstand Time 10   µs V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 10Ω , V
CPK
< 500V
t
d(on)
Turn-On Delay Time  58  T
J
= 150°C, See Fig. 11,14
t
r
Rise Time  42  I
C
= 16A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time  210  V
GE
= 15V, R
G
= 23Ω
t
f
Fall Time  160  Energy losses include "tail"
E
ts
Total Switching Loss  1.69  mJ and diode reverse recovery
L
E
Internal Emitter Inductance  7.5  nH Measured 5mm from package
C
ies
Input Capacitance  920  V
GE
= 0V
C
oes
Output Capacitance  110  pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance  27   = 1.0MHz
t
rr
Diode Reverse Recovery Time  42 60 ns T
J
= 25°C See Fig.
 80 120 T
J
= 125°C 14 I
F
= 12A
I
rr
Diode Peak Reverse Recovery Current  3.5 6.0 A T
J
= 25°C See Fig.
 5.6 10 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge  80 180 nC T
J
= 25°C See Fig.
 220 600 T
J
= 125°C 16 di/dt = 200Aµs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery  180  A/µs T
J
= 25°C See Fig.
During t
b
 160  T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600   V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage  0.54  V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage  2.21 2.7 I
C
= 16A V
GE
= 15V
 2.88  V I
C
= 28A See Fig. 2, 5
 2.36  I
C
= 16A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0  6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage  -12  mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance  5.4 8.1  S V
CE
= 100V, I
C
= 16A
I
CES
Zero Gate Voltage Collector Current   250 µA V
GE
= 0V, V
CE
= 600V
  2500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop  1.4 1.7 V I
C
= 12A See Fig. 13
 1.3 1.6 I
C
= 12A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current   ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns