Datasheet

Parameter Max. Units
V
CES
Collector-to-Emitter Breakdown Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 31
I
C
@ T
C
= 100°C Continuous Collector Current 17 A
I
CM
Pulsed Collector Current  124
I
LM
Clamped Inductive Load Current  124
V
GE
Gate-to-Emitter Voltage ± 20 V
E
ARV
Reverse Voltage Avalanche Energy  10 mJ
P
D
@ T
C
= 25°C Maximum Power Dissipation 100
P
D
@ T
C
= 100°C Maximum Power Dissipation 42
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
IRG4BC30FPbF
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
 Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
 Industry standard TO-220AB package
 Lead-Free
 Generation 4 IGBTs offer highest efficiency available
 IGBTs optimized for specified application conditions
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.59V
@V
GE
= 15V, I
C
= 17A
01/26/10
Parameter Typ. Max. Units
R
θJC
Junction-to-Case  1.2
R
θCS
Case-to-Sink, Flat, Greased Surface 0.5  °C/W
R
θJA
Junction-to-Ambient, typical socket mount  80
Wt Weight 2.0 (0.07)  g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
TO-220AB
PD -95651A