Datasheet

IRG4BC20SPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on)  27 40 I
C
= 10A
Q
ge
Gate - Emitter Charge (turn-on)  4.3 6.5 nC V
CC
= 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on)  10 15 V
GE
= 15V
t
d(on)
Turn-On Delay Time  27 
t
r
Rise Time  9.7  T
J
= 25°C
t
d(off)
Turn-Off Delay Time  540 810 I
C
= 10A, V
CC
= 480V
t
f
Fall Time  430 640 V
GE
= 15V, R
G
= 50Ω
E
on
Turn-On Switching Loss  0.12  Energy losses include "tail"
E
off
Turn-Off Switching Loss  2.05  mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss  2.17 3.2
t
d(on)
Turn-On Delay Time  25  T
J
= 150°C,
t
r
Rise Time  13  I
C
= 10A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time  760  V
GE
= 15V, R
G
= 50Ω
t
f
Fall Time  780  Energy losses include "tail"
E
ts
Total Switching Loss  3.46  mJ See Fig. 11, 14
L
E
Internal Emitter Inductance  7.5  nH Measured 5mm from package
C
ies
Input Capacitance  550  V
GE
= 0V
C
oes
Output Capacitance  39  pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance  7.1   = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600   V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage  18 VV
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage  0.75  V/°C V
GE
= 0V, I
C
= 1.0mA
 1.40 1.6 I
C
= 10A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage  1.85  I
C
= 19A See Fig.2, 5
 1.44  I
C
= 10A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0  6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage  -11  mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance  2.0 5.8  S V
CE
= 100V, I
C
= 10A
  250 V
GE
= 0V, V
CE
= 600V
  2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
  1000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current   ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
 Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.
Notes:
 Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
 V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 50Ω,
(See fig. 13a)
 Repetitive rating; pulse width limited by maximum
junction temperature.