Datasheet

Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 16
I
C
@ T
C
= 100°C Continuous Collector Current 9.0
I
CM
Pulsed Collector Current  32 A
I
LM
Clamped Inductive Load Current  32
I
F
@ T
C
= 100°C Diode Continuous Forward Current 7.0
I
FM
Diode Maximum Forward Current 32
t
sc
Short Circuit Withstand Time 10 µs
V
GE
Gate-to-Emitter Voltage ± 20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 60
P
D
@ T
C
= 100°C Maximum Power Dissipation 24
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)
IRG4BC20KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 2.27V
@V
GE
= 15V, I
C
= 9.0A
Short Circuit Rated
UltraFast IGBT
12/23/03
 Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V
GE
= 15V
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
 IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
 Industry standard TO-220AB package
Benefits
PD -94907
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case - IGBT   2.1
R
θJC
Junction-to-Case - Diode   3.5 °C/W
R
θCS
Case-to-Sink, flat, greased surface  0.50 
R
θJA
Junction-to-Ambient, typical socket mount   80
Wt Weight  2 (0.07)  g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
T
O
-22
0
AB
 Latest generation 4 IGBTs offer highest power density motor
controls possible
 HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
 This part replaces the IRGBC20KD2 and IRGBC20MD2
products
 For hints see design tip 97003
www.irf.com 1
 Lead-Free