Datasheet

IRG4BC20KD-SPbF
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 34 51 I
C
= 9.0A
Q
ge
Gate - Emitter Charge (turn-on) 4.9 7.4 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) 14 21 V
GE
= 15V
t
d(on)
Turn-On Delay Time 54
t
r
Rise Time 34 T
J
= 25°C
t
d(off)
Turn-Off Delay Time 180 270 I
C
= 9.0A, V
CC
= 480V
t
f
Fall Time 72 110 V
GE
= 15V, R
G
= 50
E
on
Turn-On Switching Loss 0.34 Energy losses include "tail"
E
off
Turn-Off Switching Loss 0.30 mJ and diode reverse recovery
E
ts
Total Switching Loss 0.64 0.96 See Fig. 9,10,14
t
sc
Short Circuit Withstand Time 10 µs V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 50 , V
CPK
< 500V
t
d(on)
Turn-On Delay Time 51 T
J
= 150°C, See Fig. 11,14
t
r
Rise Time 37 I
C
= 9.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time 220 V
GE
= 15V, R
G
= 50
t
f
Fall Time 160 Energy losses include "tail"
E
ts
Total Switching Loss 0.85 mJ and diode reverse recovery
L
E
Internal Emitter Inductance 7.5 nH Measured 5mm from package
C
ies
Input Capacitance 450 V
GE
= 0V
C
oes
Output Capacitance 61 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 14  = 1.0MHz
t
rr
Diode Reverse Recovery Time 37 55 ns T
J
= 2C See Fig.
5590 T
J
= 125°C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current 3.5 5.0 A T
J
= 2C See Fig.
4.5 8.0 T
J
= 12C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge 65 138 nC T
J
= 25°C See Fig.
124 360 T
J
= 125°C 16 di/dt = 200Aµs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery 240 A/µs T
J
= 25°C See Fig.
During t
b
210 T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 V V
GE
= 0V, I
C
= 250µA
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage 0.49 V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage 2.27 2.8 I
C
= 9.0A V
GE
= 15V
3.01 V I
C
= 16A See Fig. 2, 5
2.43 I
C
= 9.0A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
/T
J
Temperature Coeff. of Threshold Voltage -10 mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 2.9 4.3 S V
CE
= 100V, I
C
= 9.0A
I
CES
Zero Gate Voltage Collector Current 250 µA V
GE
= 0V, V
CE
= 600V
1000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop 1.4 1.7 V I
C
= 8.0A See Fig. 13
1.3 1.6 I
C
= 8.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns