Datasheet

IRG4BC20KD-SPbF
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on)  34 51 I
C
= 9.0A
Q
ge
Gate - Emitter Charge (turn-on)  4.9 7.4 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on)  14 21 V
GE
= 15V
t
d(on)
Turn-On Delay Time  54 
t
r
Rise Time  34  T
J
= 25°C
t
d(off)
Turn-Off Delay Time  180 270 I
C
= 9.0A, V
CC
= 480V
t
f
Fall Time  72 110 V
GE
= 15V, R
G
= 50Ω
E
on
Turn-On Switching Loss  0.34  Energy losses include "tail"
E
off
Turn-Off Switching Loss  0.30  mJ and diode reverse recovery
E
ts
Total Switching Loss  0.64 0.96 See Fig. 9,10,14
t
sc
Short Circuit Withstand Time 10   µs V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 50Ω , V
CPK
< 500V
t
d(on)
Turn-On Delay Time  51  T
J
= 150°C, See Fig. 11,14
t
r
Rise Time  37  I
C
= 9.0A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time  220  V
GE
= 15V, R
G
= 50Ω
t
f
Fall Time  160  Energy losses include "tail"
E
ts
Total Switching Loss  0.85  mJ and diode reverse recovery
L
E
Internal Emitter Inductance  7.5  nH Measured 5mm from package
C
ies
Input Capacitance  450  V
GE
= 0V
C
oes
Output Capacitance  61  pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance  14   = 1.0MHz
t
rr
Diode Reverse Recovery Time  37 55 ns T
J
= 25°C See Fig.
5590 T
J
= 125°C 14 I
F
= 8.0A
I
rr
Diode Peak Reverse Recovery Current  3.5 5.0 A T
J
= 25°C See Fig.
 4.5 8.0 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge  65 138 nC T
J
= 25°C See Fig.
 124 360 T
J
= 125°C 16 di/dt = 200Aµs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery  240  A/µs T
J
= 25°C See Fig.
During t
b
 210  T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600   V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage  0.49  V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage  2.27 2.8 I
C
= 9.0A V
GE
= 15V
 3.01  V I
C
= 16A See Fig. 2, 5
 2.43  I
C
= 9.0A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0  6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage  -10  mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance  2.9 4.3  S V
CE
= 100V, I
C
= 9.0A
I
CES
Zero Gate Voltage Collector Current   250 µA V
GE
= 0V, V
CE
= 600V
  1000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop  1.4 1.7 V I
C
= 8.0A See Fig. 13
 1.3 1.6 I
C
= 8.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current   ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns