Datasheet

Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 16
I
C
@ T
C
= 100°C Continuous Collector Current 9.0
I
CM
Pulsed Collector Current  32 A
I
LM
Clamped Inductive Load Current  32
I
F
@ T
C
= 100°C Diode Continuous Forward Current 7.0
I
FM
Diode Maximum Forward Current 32
t
sc
Short Circuit Withstand Time 10 µs
V
GE
Gate-to-Emitter Voltage ± 20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 60
P
D
@ T
C
= 100°C Maximum Power Dissipation 24
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)
IRG4BC20KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT
RECOVERY DIODE
Features
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 2.27V
@V
GE
= 15V, I
C
= 9.0A
Short Circuit Rated
UltraFast IGBT
8/11/04
 Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V
GE
= 15V
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
 IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
 Industry standard D
2
Pak package
Benefits

Latest generation 4 IGBT's offer highest power
density motor controls possible.
HEXFRED
TM
diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
 For hints see design tip 97003.
PD -95677
Absolute Maximum Ratings
W
2
D Pak
Parameter Typ. Max. Units
R
θJC
Junction-to-Case - IGBT  2.1
R
θJC
Junction-to-Case - Diode 2.5
R
θCS
Case-to-Sink, Flat, Greased Surface 0.5  °C/W
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)  40
Wt Weight 1.44  g
Thermal Resistance
 Lead-Free