Datasheet

Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 16
I
C
@ T
C
= 100°C Continuous Collector Current 9.0
I
CM
Pulsed Collector Current  64 A
I
LM
Clamped Inductive Load Current  64
I
F
@ T
C
= 100°C Diode Continuous Forward Current 7.0
I
FM
Diode Maximum Forward Current 32
V
GE
Gate-to-Emitter Voltage ± 20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 60
P
D
@ T
C
= 100°C Maximum Power Dissipation 24
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case - IGBT   2.1
R
θJC
Junction-to-Case - Diode   3.5 °C/W
R
θCS
Case-to-Sink, flat, greased surface  0.50 
R
θJA
Junction-to-Ambient, typical socket mount   80
Wt Weight  2 (0.07)  g (oz)
IRG4BC20FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
Features
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
= 1.66V
@V
GE
= 15V, I
C
= 9.0A
Thermal Resistance
Fast CoPack IGBT
12/23/03
Absolute Maximum Ratings
 Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
 IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
 Industry standard TO-220AB package
 Lead-Free
Benefits
 Generation -4 IGBTs offer highest efficiencies
available
 IGBTs optimized for specific application conditions
 HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
PD - 94906
W
T
O
-22
0
AB
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