Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsBJTs & IGBTsIGBT N channel 9A

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 16

@ T

= 100°C Continuous Collector Current 9.0

Pulsed Collector Current Q 64 A

Clamped Inductive Load Current R 64

@ T

= 100°C Diode Continuous Forward Current 7.0

Diode Maximum Forward Current 32

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation 60

@ T

= 100°C Maximum Power Dissipation 24

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ––– ––– 2.1

θJC

Junction-to-Case - Diode ––– ––– 3.5 °C/W

θCS

Case-to-Sink, flat, greased surface ––– 0.50 –––

θJA

Junction-to-Ambient, typical socket mount ––– ––– 80

Wt Weight ––– 2 (0.07) ––– g (oz)

IRG4BC20FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

n-channel

CES

= 600V

CE(on) typ.

= 1.66V

= 15V, I

= 9.0A

Thermal Resistance

Fast CoPack IGBT

7/11/2000

Absolute Maximum Ratings

• Fast: optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

PD 91601A

-22

www.irf.com 1

Summary of content (10 pages)

PAGE 1
PD 91601A IRG4BC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
PAGE 2
IRG4BC20FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 VCE(on) Collector-to-Emitter Saturation Voltage — 1.66 — 2.06 — 1.76 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance T 2.9 5.1 ICES Zero Gate Voltage Collector Current — — — — V FM Diode Forward Voltage Drop — 1.4 — 1.
PAGE 3
IRG4BC20FD 14 For both: D uty cy cle: 50% TJ = 125°C T s ink = 90°C G ate drive as specified P ow e r Dis sip ation = 13 W LOAD CURRENT (A) 12 10 8 S q u a re w a v e : 6 0% of rate d volta ge 6 I 4 Id e a l d io d e s 2 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 o C TJ = 150 o C 10 V = 15V 20µs PULSE WIDTH GE 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig.
PAGE 4
IRG4BC20FD 16 3.0 V = 15V 80 us PULSE WIDTH IC = 18 A VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE 12 8 4 0 25 50 75 100 125 150 A IC = 9.0 9A 2.0 IC = 4.5 A 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 0.50 0.20 0.
PAGE 5
IRG4BC20FD VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 800 Cies 600 400 Coes 200 C res 20 VGE , Gate-to-Emitter Voltage (V) 1000 10 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 10 Total Switching Losses (mJ) Total Switching Losses (mJ) 0.86 0.84 0.82 0.80 0.78 10 20 30 40 Ω RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 15 20 25 30 Fig.
PAGE 6
IRG4BC20FD 100 = 50Ohm Ω = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) RG TJ VCC 2.5 VGE 2.0 1.5 1.0 0.5 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0.0 0 4 8 12 16 1 20 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 100 In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) Total Switching Losses (mJ) 3.
PAGE 7
IRG4BC20FD 100 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 80 I F = 8 .0A I IR R M - (A ) t rr - (ns) IF = 16 A 60 I F = 1 6A 10 IF = 8 .0 A 40 I F = 4.0 A I F = 4 .0 A 20 0 100 1 100 1000 d i f /d t - (A /µ s) 1000 di f /dt - (A /µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs.
PAGE 8
IRG4BC20FD 90% Vge Same ty pe device as D .U.T. +Vge Vce 430µF 80% of Vce D .U .T. Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T .
PAGE 9
IRG4BC20FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20.
PAGE 10
IRG4BC20FD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 4 3.78 (.149) 3.54 (.139) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255 ) 6.10 (.240 ) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.045) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .