Datasheet

IRG4BC15UD
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0 10 20 30 40 50
R
G
, Gate Resistance (
Ω
)
0.42
0.44
0.46
0.48
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25°C
I
C
= 7.8A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.1
1
10
Total Switching Losses (mJ)
R
G
= 75Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 14A
I
C
= 7.8A
I
C
= 3.9A
0 5 10 15 20 25
0
4
8
12
16
20
Q , Total Gate Char
g
e (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 7.8A
CC
C
1 10 100
0
200
400
600
800
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
g
c , ce
res
g
c
oes ce
g
c
C
ies
C
oes
C
res