Datasheet

IRG4BC15UD
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) ––– 23 35 I
C
= 7.8A
Qge Gate - Emitter Charge (turn-on) ––– 4.0 6.0 nC V
CC
= 400V
Q
gc
Gate - Collector Charge (turn-on) ––– 9.6 14 V
GE
= 15V
t
d(on)
Turn-On Delay Time ––– 17 ––– T
J
= 25°C
t
r
Rise Time ––– 20 ––– ns I
C
= 7.8A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ––– 160 240 V
GE
= 15V, R
G
= 75Ω
t
f
Fall Time ––– 83 120 Energy losses include "tail" and
E
on
Turn-On Switching Loss ––– 0.24 ––– diode reverse recovery.
E
off
Turn-Off Switching Loss ––– 0.26 ––– mJ
E
ts
Total Switching Loss ––– 0.50 0.63
t
d(on)
Turn-On Delay Time ––– 16 ––– T
J
= 150°C,
t
r
Rise Time ––– 21 ––– ns I
C
= 7.8A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time ––– 180 ––– V
GE
= 15V, R
G
= 75Ω
t
f
Fall Time ––– 220 ––– Energy losses include "tail" and
E
ts
Total Switching Loss ––– 0.76 ––– mJ diode reverse recovery.
L
E
Internal Emitter Inductance ––– 7.5 ––– nH Measured 5mm from package
C
ies
Input Capacitance ––– 410 ––– V
GE
= 0V
C
oes
Output Capacitance ––– 37 ––– pF V
CC
= 30V
C
res
Reverse Transfer Capacitance ––– 5.3 ––– ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time ––– 28 42 ns T
J
= 25°C
––– 38 57 T
J
= 125°C I
F
= 4.0A
I
rr
Diode Peak Reverse Recovery Current ––– 2.9 5.2 A T
J
= 25°C
––– 3.7 6.7 T
J
= 125°C V
R
= 200V
Q
rr
Diode Reverse Recovery Charge ––– 40 60 nC T
J
= 25°C
––– 70 110 T
J
= 125°C di/dt 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery ––– 280 ––– A/µs T
J
= 25°C
During t
b
––– 240 ––– T
J
= 125°C
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– ––– V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage ––– 2.02 2.4 I
C
= 7.8A V
GE
= 15V
––– 2.56 ––– V I
C
= 14A
––– 2.21 ––– I
C
= 7.8A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 ––– 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance  4.1 6.2 ––– S V
CE
= 100V, I
C
= 7.8A
I
CES
Zero Gate Voltage Collector Current ––– ––– 250 µA V
GE
= 0V, V
CE
= 600V
––– ––– 1400 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop ––– 1.5 1.8 V I
C
= 4.0A
––– 1.4 1.7 I
C
= 4.0A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ––– ––– ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)