Datasheet

IRFZ24N
4 www.irf.com
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
500
600
700
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Volta
g
e
(
V
)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss
g
s
g
d ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
0
4
8
12
16
20
048121620
Q , Total Gate Char
g
e
(
nC
)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
I = 10A
DS
DS
D
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Volta
g
e
(
V
)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Sin
g
le P ulse
C
J