Datasheet

3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015
IRFR7440PbF/IRFU7440PbF
S
D
G
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max.
Units
gfs Forward Transconductance 280 ––– ––– S
Q
g
Total Gate Charge ––– 89 134 nC
Q
gs
Gate-to-Source Charge ––– 26 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 26 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 63 –––
t
d(on)
Turn-On Delay Time ––– 11 ––– ns
t
r
Rise Time –––39–––
t
d(off)
Turn-Off Delay Time ––– 51 –––
t
f
Fall Time ––– 34 –––
C
iss
Input Capacitance ––– 4610 ––– pF
C
oss
Output Capacitance ––– 690 –––
C
rss
Reverse Transfer Capacitance ––– 460 –––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 855 –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 1210 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max.
Units
I
S
Continuous Source Current ––– ––– 180 A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 760 A
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.9 1.3 V
t
rr
Reverse Recovery Time ––– 34 ––– ns T
J
= 25°C V
R
= 34V,
–––35––– T
J
= 125°C I
F
= 90A
Q
rr
Reverse Recovery Charge ––– 33 ––– nC T
J
= 25°C
di/dt = 100A/μs
–––34––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.8 ––– A T
J
= 25°C
V
DD
= 20V
I
D
= 90A, V
DS
=0V, V
GS
= 10V
I
D
= 30A
R
G
= 2.7Ω
Conditions
V
GS
= 10V
V
GS
= 0V
Conditions
V
DS
= 10V, I
D
= 90A
I
D
=90A
V
DS
=20V
V
GS
= 10V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V See Fig. 12
V
GS
= 0V, V
DS
= 0V to 32V
T
J
= 25°C, I
S
= 90A, V
GS
= 0V
integral reverse
p-n junction diode.
MOSFET symbol
showing the