Datasheet

IRFB/IRFIB/IRFS/IRFSL41N15DPbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.045 Ω
V
GS
= 10V, I
D
= 25A
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.5 V
V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current ––– ––– 25 µA
V
DS
= 150V, V
GS
= 0V
––– ––– 250
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
V
GS
= 30V
Gate-to-Source Reverse Leakage ––– ––– -100
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 18 ––– ––– S
V
DS
= 50V, I
D
= 25A
Q
g
Total Gate Charge ––– 72 110
I
D
= 25A
Q
gs
Gate-to-Source Charge ––– 21 31 nC
V
DS
= 120V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 35 52
V
GS
= 10V
t
d(on)
Turn-On Delay Time ––– 16 –––
V
DD
= 75V
t
r
Rise Time –––63–––
I
D
= 25A
t
d(off)
Turn-Off Delay Time ––– 25 ––– ns
R
G
= 2.5
Ω
t
f
Fall Time –––14–––
V
GS
= 10V
C
iss
Input Capacitance ––– 2520 –––
V
GS
= 0V
C
oss
Output Capacitance ––– 510 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz
C
oss
Output Capacitance ––– 3090 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 230 –––
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
C
oss
eff.
Effective Output Capacitance ––– 250 –––
V
GS
= 0V, V
DS
= 0V to 120V
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy
––– 470 mJ
I
AR
Avalanche Current
––– 25 A
E
AR
Repetitive Avalanche Energy
––– 20 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current ––– ––– 41 MOSFET symbol
(Body Diode) A showing the
I
SM
Pulsed Source Current ––– ––– 164 integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 170 260 ns
T
J
= 25°C, I
F
= 25A
Q
rr
Reverse Recovery Charge ––– 1.3 1.9 µC
di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD
)