Datasheet

IRFR/U5305
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
500
1000
1500
2000
2500
1 10 100
C, Capacitance (pF)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss
g
s
g
d ds
rss
g
d
oss ds
g
d
C
iss
C
oss
C
rss
DS
-V , Drain-to-Source Volta
g
e
(
V
)
0
4
8
12
16
20
0 102030405060
Q , Total Gate Char
g
e
(
nC
)
G
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = -44V
V = -28V
I = -16A
GS
-V , Gate-to-Source Voltage (V)
D
DS
DS
10
100
1000
0.4 0.8 1.2 1.6 2.0
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Volta
g
e
(
V
)
T = 175°C
J
1
10
100
1000
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Sin
g
le Pulse
C
J
DS
-V , Drain-to-Source Volta
g
e
(
V
)
D
-I , Drain Current (A)