Datasheet
IRFR/U120ZPbF
2 www.irf.com
S
D
G
El
ec
t
r
i
ca
l Ch
arac
t
er
i
s
ti
cs
@ T
J
=
25°C (
un
l
ess
o
th
erw
i
se
spec
ifi
e
d)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 100 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.084 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 150 190
m
Ω
V
GS(th)
Gate Threshold Volta
g
e 2.0 ––– 4.0 V
g
fs Forward Transconductance 16 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Q
g
Total Gate Char
g
e–––6.910
Q
gs
Gate-to-Source Char
g
e ––– 1.6 ––– nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– 3.1 –––
t
d(on)
Turn-On Dela
y
Time ––– 8.3 –––
t
r
Rise Time –––26–––
t
d(off)
Turn-Off Dela
y
Time –––27–––ns
t
f
Fall Time –––23–––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 310 –––
C
oss
Output Capacitance ––– 41 –––
C
rss
Reverse Transfer Capacitance ––– 24 ––– pF
C
oss
Output Capacitance ––– 150 –––
C
oss
Output Capacitance ––– 26 –––
C
oss
eff.
Effective Output Capacitance ––– 57 –––
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 8.7
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 35
(Body Diode)
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recover
y
Time –––2436ns
Q
rr
Reverse Recover
y
Char
g
e ––– 23 35 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 5.2A
R
G
= 53 Ω
T
J
= 25°C, I
S
= 5.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.2A, V
DD
= 50V
di/dt = 100A/
µ
s
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.2A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 5.2A
I
D
= 5.2A
V
DS
= 80V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V