Datasheet


IRFP4868PbF
4 www.irf.com © 2012 International Rectifier October 30, 2012
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Temperature ( °C )
280
290
300
310
320
330
340
350
360
370
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5mA
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
Fig 8. Maximum Safe Operating Area
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
10
20
30
40
50
60
70
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-50 0 50 100 150 200 250 300 350
V
DS,
Drain-to-Source Voltage (V)
0.0
5.0
10.0
15.0
20.0
E
n
e
r
g
y
(
µ
J
)
Fig 9. Maximum Drain Current vs. Case Temperature
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
1000
2000
3000
4000
5000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 11A
20A
BOTTOM 42A
Fig 10. Drain-to-Source Breakdown Voltage
0.0 0.5 1.0 1.5
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
Fig 7. Typical Source-to-Drain Diode
Forward Voltage
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 11. Typical Coss Stored Energy