Datasheet

IRFP4332PbF
4 www.irf.com
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
Fig 7. Typical E
PULSE
vs.Temperature
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
25 50 75 100 125 150
Temperature (°C)
0
200
400
600
800
1000
1200
1400
E
n
e
r
g
y
p
e
r
p
u
l
s
e
(
µ
J
)
L = 220nH
C= 0.3µF
C= 0.2µF
C= 0.1µF
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 40 80 120 160
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 200V
V
DS
= 125V
V
DS
= 50V
I
D
= 35A
25 50 75 100 125 150 175
T
J
, Junction Temperature (°C)
0
10
20
30
40
50
60
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1µsec
10µsec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec