Datasheet

IRFP048N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
is s
C
oss
C
rss
0
4
8
12
16
20
0 20 40 60 80 100
Q , Total Gate Charge (nC)
G
V , G ate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 32A
V = 44V
V = 28V
D
DS
DS
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8 2.2 2.6
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
S ingle Pulse
C
J