Datasheet
IRFP048N
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.016 Ω V
GS
= 10V, I
D
= 37A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 22 ––– ––– S V
DS
= 25V, I
D
= 32A
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 89 I
D
= 32A
Q
gs
Gate-to-Source Charge ––– ––– 20 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 39 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= 28V
t
r
Rise Time ––– 78 ––– I
D
= 32A
t
d(off)
Turn-Off Delay Time ––– 32 ––– R
G
= 5.1Ω
t
f
Fall Time ––– 48 ––– R
D
= 0.85Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1900 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 620 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
5.0
I
DSS
Drain-to-Source Leakage Current
13
V
DD
= 25V, starting T
J
= 25°C, L = 530µH
R
G
= 25Ω, I
AS
= 32A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 32A, di/dt ≤ 250A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ48N data and test conditions
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 37A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 94 140 ns T
J
= 25°C, I
F
= 32A
Q
rr
Reverse RecoveryCharge ––– 360 540 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
S
D
G
A
45
210