Datasheet

IRFL4310PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient 0.12 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.20 V
GS
= 10V, I
D
= 1.6A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 1.5 ––– –– S V
DS
= 50V, I
D
= 0.80 A
––– ––– 25
µA
V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Q
g
Total Gate Charge –– 17 25 I
D
= 1.6A
Q
gs
Gate-to-Source Charge –– 2.1 3.1 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 7.8 12 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 7.8 ––– V
DD
= 50V
t
r
Rise Time ––– 18 ––
ns
I
D
= 1.6A
t
d(off)
Turn-Off Delay Time ––– 34 ––– R
G
= 6.2
t
f
Fall Time ––– 20 ––– R
D
= 31 Ω, See Fig. 10
C
iss
Input Capacitance ––– 330 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 92 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
1.6A, di/dt 340A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 9.2 mH
R
G
= 25, I
AS
= 3.2A. (See Figure 12)
Pulse width 300µs; duty cycle 2%.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 1.6A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 72 110 ns T
J
= 25°C, I
F
= 1.6A
Q
rr
Reverse RecoveryCharge ––– 210 320 nC di/dt = 100A/µs
––– –––
–––
–––
13
0.91
A
Source-Drain Ratings and Characteristics