Datasheet
IRFL014N
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.16 Ω V
GS
= 10V, I
D
= 1.9A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 1.6 ––– ––– S V
DS
= 25V, I
D
= 0.85A
––– ––– 1.0
µA
V
DS
= 44V, V
GS
= 0V
––– ––– 25 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– 7.0 11 I
D
= 1.7A
Q
gs
Gate-to-Source Charge ––– 1.2 1.8 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 3.3 5.0 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 6.6 ––– V
DD
= 28V
t
r
Rise Time ––– 7.1 ––– I
D
= 1.7A
t
d(off)
Turn-Off Delay Time ––– 12 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 3.3 ––– R
D
= 16Ω, See Fig. 10
C
iss
Input Capacitance ––– 190 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 72 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 33 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.0 V T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 41 61 ns T
J
= 25°C, I
F
= 1.7A
Q
rr
Reverse RecoveryCharge ––– 64 95 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– 15
1.3
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 1.7A, di/dt ≤ 250A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 8.2mH
R
G
= 25Ω, I
AS
= 3.4A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.