Datasheet

IRFI540NPbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100   V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient  0.11  V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance   0.052 Ω V
GS
= 10V, I
D
= 11A 
V
GS(th)
Gate Threshold Voltage 2.0  4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 11   S V
DS
= 50V, I
D
= 16A
  25 V
DS
= 100V, V
GS
= 0V
  250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage   100 V
GS
= 20V
Gate-to-Source Reverse Leakage   -100 V
GS
= -20V
Q
g
Total Gate Charge   94 I
D
= 16A
Q
gs
Gate-to-Source Charge   15 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge   43 V
GS
= 10V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time  8.2  V
DD
= 50V
t
r
Rise Time  39  I
D
= 16A
t
d(off)
Turn-Off Delay Time  44  R
G
= 5.1Ω
t
f
Fall Time  33  R
D
= 3.0Ω, See Fig. 10 
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance  1400  V
GS
= 0V
C
oss
Output Capacitance  330  V
DS
= 25V
C
rss
Reverse Transfer Capacitance  170   = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance  12   = 1.0MHz
nH
µA
nA
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance  
ns
S
D
G
4.5
7.5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)

L
D
Internal Drain Inductance



pF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage   1.3 V T
J
= 25°C, I
S
= 11A, V
GS
= 0V 
t
rr
Reverse Recovery Time  170 250 ns T
J
= 25°C, I
F
= 16A
Q
rr
Reverse RecoveryCharge  1.1 1.6 µC di/dt = 100A/µs 
Source-Drain Ratings and Characteristics
A
  110
  20
S
D
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 V
DD
= 25V, starting T
J
= 25°C, L = 2.0mH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
 t=60s, =60Hz
 I
SD
≤ 16A, di/dt ≤ 210A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
 Uses IRF540N data and test conditions
 Pulse width ≤ 300µs; duty cycle ≤ 2%.