Datasheet

IRFHS9351PbF
2 www.irf.com
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Current limited by package. .
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board.
 R
θ
is measured at T
J
of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
.
G
D
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-t o-Source Breakdown Voltage -30 ––– ––– V
V
DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
––– 135 170
––– 235 290
V
GS(th )
Ga te Th resh old Volt age -1. 3 -1.8 -2.4 V
V
GS(th)
Gate Threshold Voltage Coefficient ––– -4.6 ––– mV/°C
I
DSS
Drain-t o-Source Leakage Curren t ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 2.4 ––– ––– S
Q
g
Total Gate Charge ––– 1. 9 ––– n C V
DS
= -15V,V
GS
= -4.5V,I
D
= - 3.1A
Q
g
Total Gate Charge ––– 3. 7 –––
Q
gs
Gate-to-Source Charge ––– 0. 6 –––
Q
gd
Gate-to-Drain Charge ––– 1. 1 –––
R
G
Ga te R esis tan ce ––– 17 –––
t
d(on)
Turn-On Delay Time ––– 8.3 –––
t
r
Rise Time ––– 30 –––
t
d(off)
Turn-Off Delay Time ––– 6.3 –––
t
f
Fall Time ––– 7.9 –––
C
iss
Input Capacitance ––– 160 –––
C
oss
Output Capacitance ––– 39 –––
C
rss
Reverse Transfer Capacitance ––– 26 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continu ous Source Current
(Body Diode)
I
SM
Pulsed Sou rce Current
(Body Diode)
V
SD
Dio de Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 20 30 n s
Q
rr
Reverse Recovery Charge ––– 42 63 nC
Thermal Resistance
Parameter Units
R
JC
(Bottom)
Junctio n-to-Case
R
JC
(To p)
Junctio n-to-Case
R
JA
Junctio n-to-Ambient
R
JA
Junctio n-to-Ambient (t<10s)
90
Sta ti c Drain-to-S ou rc e On -Re sistance
A
––– –––
––– –––
-5.1
Typ.
nA
nC
ns
pF
R
G
= 1 .8
See Figs. 19a & 19b
ƒ = 1.0KHz
V
GS
= 0V
V
DS
= -25V
V
DS
= -10V, I
D
= -3.1A
V
DS
= -24V, V
GS
= 0 V, T
J
= 125°C
V
DD
= -15V, V
GS
= -4.5V
I
D
= -3.1A
V
DS
= -15V
V
GS
= -20V
V
GS
= 20V
V
GS
= -10V
m
μA
T
J
= 25°C, I
F
= -3.1A, V
DD
= -15V
di/dt = 370/μs
T
J
= 25°C, I
S
= -3.1A, V
GS
= 0V
showing the
inte gral reve rse
p-n junction diode.
MOSFET symbol
I
D
= -3.1A
V
DS
= -24V, V
GS
= 0 V
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -3.1A
V
GS
= -4.5V, I
D
= -2.5A
V
DS
= V
GS
, I
D
= -10μ A
––– 170
°C/W
Conditions
-20
–––
–––
Max.
19
75