Datasheet

IRFHM830DPbF
2 www.irf.com
D
S
G
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 3.4
R
θ
JC
(Top)
Junction-to-Case
––– 37
°C/W
R
θJA
Junction-to-Ambient
––– 46
R
θ
JA
(<10s)
Junction-to-Ambient
––– 31
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.4 4.3
––– 5.7 7.1
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
V
DS
= V
GS
, I
D
= 50µA
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
V
DS
= V
GS
, I
D
= 1mA
I
DSS
Drain-to-Source Leakage Current ––– ––– 500
µA
––– ––– 5
mA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 69 ––– ––– S
Q
g
Total Gate Charge ––– 27 ––– nC
Q
g
Total Gate Charge ––– 13 20
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.9 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.8 –––
Q
gd
Gate-to-Drain Charge ––– 4.5 –––
Q
godr
Gate Charge Overdrive ––– 3.8 ––– See Fig.17 & 18
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
––– 6.3 –––
Q
oss
Output Charge ––– 10 ––– nC
R
G
Gate Resistance ––– 1.1
–––
Ω
t
d(on)
Turn-On Delay Time ––– 9.8 –––
t
r
Rise Time ––– 20 –––
t
d(off)
Turn-Off Delay Time ––– 9.1 –––
t
f
Fall Time ––– 6.7 –––
C
iss
Input Capacitance ––– 1797 –––
C
oss
Output Capacitance ––– 363 –––
C
rss
Reverse Transfer Capacitance ––– 148 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 0.85 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 17 26 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
GS
= 4.5V, I
D
= 20A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 15V, I
D
= 20A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
m
Ω
I
D
= 20A
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/µs
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
V
GS
= 0V
V
DS
= 25V
V
DS
= 15V
–––
Conditions
V
GS
= 0V, I
D
= 1mA
Reference to 25°C, I
D
= 4mA
V
GS
= 10V, I
D
= 20A
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
Conditions
See Fig.15
Max.
82
20
ƒ = 1.0MHz
nA
ns
pF
nC
A
40
––– ––– 160
––– –––