Datasheet

IRFH8337PbF
2 www.irf.com
D
S
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
–––
4.7
R
θJC
(Top)
Junction-to-Case
–––
40
°C/W
R
θJA
Junction-to-Ambient
–––
39
R
θJA
(<10s)
Junction-to-Ambient
–––
26
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.025 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 10.3 12.8
––– 15.8 19.9
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V V
DS
= V
GS
, I
D
= 25μA
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 31 ––– ––– S
Q
g
Total Gate Charge ––– 10 ––– nC
Q
g
Total Gate Charge ––– 4.7 –––
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 1.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 0.7 –––
Q
gd
Gate-to-Drain Charge ––– 1.4 –––
Q
godr
Gate Charge Overdrive ––– 1.0 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 2.1 –––
Q
oss
Output Charge ––– 4.2 ––– nC
R
G
Gate Resistance ––– 1.6
–––
Ω
t
d(on)
Turn-On Delay Time ––– 6.4 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 5.7 –––
t
f
Fall Time ––– 4.1 –––
C
iss
Input Capacitance –––
790
–––
C
oss
Output Capacitance –––
180
–––
C
rss
Reverse Transfer Capacitance –––
69
–––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 12 18 ns
Q
rr
Reverse Recovery Charge ––– 17 26 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 15V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 65
––– ––– 16.2
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 16.2A
V
DS
= 24V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
V
GS
= 10V, V
DS
= 15V, I
D
= 16.2A
V
GS
= 0V
V
DS
= 10V
Conditions
Max.
28
16.2
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 16.2A, V
DD
= 15V
di/dt = 390 A/μs
T
J
= 25°C, I
S
= 16.2A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 13A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 10V, I
D
= 16.2A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
mΩ
I
D
= 16.2A
I
D
= 16.2A