Datasheet

IRFH8324PbF
2 www.irf.com
D
S
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
–––
2.3
R
θJC
(Top)
Junction-to-Case
–––
32
°C/W
R
θJA
Junction-to-Ambient
–––
35
R
θJA
(<10s)
Junction-to-Ambient
–––
23
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.3 4.1
––– 5.0 6.3
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V V
DS
= V
GS
, I
D
= 50μA
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 72 ––– ––– S
Q
g
Total Gate Charge ––– 31 ––– nC
Q
g
Total Gate Charge ––– 14 –––
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 4.4 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.2 –––
Q
gd
Gate-to-Drain Charge ––– 3.5 –––
Q
godr
Gate Charge Overdrive ––– 3.9 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 5.7 –––
Q
oss
Output Charge ––– 13 ––– nC
R
G
Gate Resistance ––– 1.1
–––
Ω
t
d(on)
Turn-On Delay Time ––– 13 –––
t
r
Rise Time ––– 26 –––
t
d(off)
Turn-Off Delay Time ––– 14 –––
t
f
Fall Time ––– 8.5 –––
C
iss
Input Capacitance –––
2380
–––
C
oss
Output Capacitance –––
500
–––
C
rss
Reverse Transfer Capacitance –––
205
–––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 25 38 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 15V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 200
––– ––– 50
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 20A
V
DS
= 24V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
V
GS
= 0V
V
DS
= 10V
Conditions
Max.
94
20
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 360 A/μs
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 16A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 10V, I
D
= 20A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
mΩ
I
D
= 20A
I
D
= 20A