Datasheet

IRFH5306PbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 6.9 8.1
––– 11 13.3
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 5.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 35 ––– ––– S
Q
g
Total Gate Charge ––– 7.8 12
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 1.8 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.1 –––
Q
gd
Gate-to-Drain Charge ––– 3.0 –––
Q
godr
Gate Charge Overdrive ––– 1.9 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 4.1 –––
Q
oss
Output Charge ––– 4.9 ––– nC
R
G
Gate Resistance ––– 1.4
–––
Ω
t
d(on)
Turn-On Delay Time ––– 9.0 –––
t
r
Rise Time ––– 26 –––
t
d(off)
Turn-Off Delay Time ––– 9.1 –––
t
f
Fall Time ––– 6.1 –––
C
iss
Input Capacitance ––– 1125 –––
C
oss
Output Capacitance ––– 230 –––
C
rss
Reverse Transfer Capacitance ––– 102 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 17 26 ns
Q
rr
Reverse Recovery Charge ––– 18 27 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
–––
V
DS
= V
GS
, I
D
= 25μA
A
44
––– ––– 60
––– –––
nA
Conditions
See Fig.15
Max.
46
15
ƒ = 1.0MHz
V
DS
= 15V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
pF
nC
V
DS
= 15V
ns
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 15A
V
GS
= 0V
T
J
= 25°C, I
F
= 15A, V
DD
= 15V
di/dt = 200A/μs
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 15A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 15V, I
D
= 15A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
m
Ω
μA
I
D
= 15A
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 4.9
R
θ
JC
(Top)
Junction-to-Case
––– 24 °C/W
R
θ
JA
Junction-to-Ambient
––– 35
R
θ
JA
(<10s)
Junction-to-Ambient
––– 22